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BSS84 - P-Channel MOSFET

General Description

This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching.

Key Features

  • -0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V.
  • Voltage-Controlled P-Channel Small-Signal Switch.
  • High-Density Cell Design for Low RDS(ON).
  • High Saturation Current D D S SOT-23 G G Absolute Maximum Ratings S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSS84 — P-Channel Enhancement Mode Field-Effect Transistor February 2013 BSS84 P-Channel Enhancement Mode Field-Effect Transistor Features  -0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V  Voltage-Controlled P-Channel Small-Signal Switch  High-Density Cell Design for Low RDS(ON)  High Saturation Current D D S SOT-23 G G Absolute Maximum Ratings S Description This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A.