BSS84 Overview
This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52.
BSS84 Key Features
- 0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
- Voltage-Controlled P-Channel Small-Signal
- High-Density Cell Design for Low RDS(ON)
- High Saturation Current
